to-126 plastic-encapsulate transistors MJE13003 transistor (npn) features z power switching applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 600 v collector-emitter breakdown voltage v (br)ceo i c = 1ma,i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 6 v collector cut-off current i cbo v cb =600v,i e =0 100 ua collector cut-off current i ceo v ce =400v,i b =0 100 ua emitter cut-off current i ebo v eb =7v,i c =0 10 ua h fe(1) * v ce =10v, i c =200ma 9 40 dc current gain h fe(2) v ce =10v, i c =250 a 5 collector-emitter saturation voltage v ce(sat)1 i c =200ma,i b =40ma 0.5 v base-emitter saturation voltage v be(sat) i c =200ma,i b =40ma 1.1 v transition frequency f t v ce =10v, i c =100ma,f=1mhz 5 mhz fall time t f i c =100ma 0.5 storage time t s * i c =100ma 2 4 s classification of h fe(1) range 9-15 15-20 20-25 25-30 30-35 35-40 classification of t s rank a1 a2 b1 b2 range 2-2.5 2.5-3 3-3.5 3.5-4 symbol parameter value unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 6 v i c collector current -continuous 1 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 /w t j junction temperature 150 t stg storage temperature -55~+150 to-126 1 . base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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